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#Bjt 3904 datasheet download

MMBT4401T-7-F : Transistor (bjt) - Single Discrete Semiconductor Product 600mA 40V 150mW NPN TRANSISTOR NPN 40V SOT-523 Specifications: Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 600mA Power - Max: 150mW DC Current Gain (hFE) (Min) Ic, Vce: 100 150mA, 1V Vce Saturation (Max) Ib, Ic: 750mV 50mA, 500mA Frequency - Transition: 250MHz Curren SMCJ9.0A-CA : 1500w Surface Mount Transient Voltage SuppressorīZT52C5V1-7 : Diode - Zener - Single Discrete Semiconductor Product 2♚ 2V 5.1V 500mW Surface Mount DIODE ZENER 5.1V 500MW SOD-123 Specifications: Voltage - Zener (Nom) (Vz): 5.1V Power - Max: 500mW Impedance (Max) (Zzt): 60 Ohm Voltage - Forward (Vf) (Max) If: 900mV 10mA Current - Reverse Leakage Vr: 2♚ 2V Tolerance: ±5.88% Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Cut Tape (CT) Some Part number from the same manufacture Diodes, Inc.ĢN4124 NPN Small Signal Transistor: 25v, 200maĢN4126 PNP Small Signal Transistor: -25v, -200maĢN7000 N-channel Enhancement Mode Field Effect TransistorĢN7002 60V N-channel Enchancement Mode Field Effect TransistorĢN7002DW 60V Dual N-channel Enchancement Mode Field Effect TransistorĢN7002T 60V 15mA N-channel Enchancement Mode Field Effect TransistorĢN7002W 60V N-channel Enchancement Mode Field Effect TransistorĢW005G 2.0A Glass Passivated Bridge RectifierĥKP100A 5000W Transient Voltage SuppressorĥKP100CA 100V 5000W Transient Voltage SuppressorĥKP100CA 5000W Transient Voltage SuppressorĥKP110CA 110V 5000W Transient Voltage SuppressorĥKP110CA 5000W Transient Voltage SuppressorĥKP120CA 120V 5000W Transient Voltage SuppressorĥKP120CA 5000W Transient Voltage SuppressorĥKP150CA 150V 5000W Transient Voltage SuppressorĥKP150CA 5000W Transient Voltage SuppressorĥKP180CA 180V 5000W Transient Voltage SuppressorĥKP180CA 5000W Transient Voltage SuppressorĪP1701BW : 3-pin Microprocessor Reset Circuits

VCE(SAT) VBE(SAT) ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO fT CCBO CEBO ts tf = 25☌ unless otherwise specified Symbol hFE Min Max Unit ¾ Test Condition -VCE = 0.1mA -VCE = 1.0mA -VCE = 10mA -VCE = 50mA -VCE = 100mA (Note 2) -IC = 1.0mA -IC = 5.0mA (Note 2) -IC = 10mA, -IB = 1.0mA -IC = 50mA, -IB = 5.0mA -VEB = 3.0V, -VCE = 30V -VEB = 3.0V, -VCE = 30V -IC = 10♚, -IB = 0 -IC = 0 (Note 2) -IE = 0 VCE = 20V, -IC = 100MHz -VCB = 5.0V, -IE = 100kHz -VEB = 0.5V, -IC = 100kHz -VCE = 5.0V, -IC = 1.0mA, -IC = 10mA, VCC = 3.0V, VBE(off) = 10mA, -VCC = 3.0V, -VBE(off) = 1.0mA, -IC = 10mA, -VCC = 1.0mA, -IC = 10mA, -VCC = 3.0VĬollector Saturation Voltage Base Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-base Breakdown voltage Gain Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Delay Time Rise Time Storage Time Fall Time Pulse test: Pulse width £ 300ms, duty cycle £ 2%. Leads maintained at a distance of 2.0mm from body at specified ambient temperature. = 25☌ unless otherwise specified Symbol VCBO VCEO VEBO IC ICM (Note 1) (Note 1) Pd RqJA Tj, TSTGĬollector-Base Voltage Collector-Emitter Voltage Emitter-Base VoltageĬollector Current - Continuous Collector Current - Peak Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes:ġ.

#Bjt 3904 datasheet download

You can download the results of your (filtered) selection to Excel by clicking the Download Excel button.Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available (2N3906)Ĭase: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: Type Number Weight: 0.18 grams (approx.).

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